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? semiconductor components industries, llc, 2013 july, 2013 ? rev. 4 1 publication order number: lm4040/d lm4040, lm4041 precision micro-power shunt voltage references description lm4040 and lm4041 are precision two ? terminal shunt mode voltage references offered in factory programmed reverse breakdown voltages of 1.225 v, 2.500 v, 3.000 v, 3.300 v, 4.096 v, and 5.000 v. on semiconductor?s charge programmable floating gate technology ensures precise voltage settings offering five grades of initial accuracy; from 0.1% to 2%. lm4040 and lm4041 operate over a shunt current range of 60 a to 15 ma with low dynamic impedance, and 100 ppm/ c temperature coefficient ensuring stable reverse breakdown voltage accuracy over a wide range of operating conditions. these shunt regulators do not require an external stabilizing capacitor but are stable with any capacitive load (up to 1 f). offered in space saving sot ? 23 and sc ? 70 packages lm4040 and lm4041 are specified for operation over the full industrial temperature range of ? 40 c to +85 c. features ? reverse breakdown voltages: ? 1.225 v ? 3.300 v ? 2.500 v ? 4.096 v ? 3.000 v ? 5.000 v ? accuracy grades: ? a: 0.1% ? d: 1.0% ? b: 0.2% ? e: 2.0% ? c: 0.5% ? operating current: 60 a to 15 ma ? low output noise: 35 v (10 hz to 10 khz) ? small package size: sot ? 23, sc ? 70 ? these devices are pb ? free, halogen free/bfr free and are rohs compliant typical applications ? mobile handheld devices ? industrial process control ? instrumentation ? laptop and desktop pcs ? automotive ? energy management http://onsemi.com sc ? 70 5 lead sd suffix case 419ac marking diagrams see detailed ordering and shipping information in the package dimensions section on page 11 of this data sheet. ordering information sot ? 23 3 lead tb suffix case 527ag pin connections 3 4 5 2 1 1 2 3 4x = specific device code = (4l = lm4040, 4m = lm4041) a = assembly location code y = production year m = production month = pb ? free package (sot ? 23) (sc ? 70) 4xym 4xa
lm4040, lm4041 http://onsemi.com 2 figure 1. test circuit v r v in r s lm4040 lm4041 table 1. pin descriptions pin name function sot ? 23 sc ? 70 1 3 v+ positive voltage 2 1 v ? negative voltage 3 2 nc this pin must be left floating or connected to v ? . 4 nic no internal connection. a voltage or signal applied to this pin will have no effect. 5 nic table 2. absolute maximum ratings parameter rating unit reverse current 20 ma forward current 10 ma junction temperature 150 c power dissipation sot ? 23 ? 3 300 mw power dissipation sc ? 70 ? 5 240 mw stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. table 3. recommended operating conditions parameter rating unit i reverse 0.06 ? 15 ma ambient temperature range ? 40 to +85 c table 4. esd susceptability symbol parameter min units esd human body model 2000 v machine model 200 v
lm4040, lm4041 http://onsemi.com 3 table 5. dc electrical characteristics (i r = 100 a, t a = ? 40 c to +85 c, unless otherwise noted. typical values are at t a = +25 c.) symbol parameter test conditions limits units min typ max 1.225 v v r reverse breakdown voltage t a = +25 c lm4041a (0.1%) 1.2238 1.225 1.2262 v lm4041b (0.2%) 1.2226 1.225 1.2274 lm4041c (0.5%) 1.219 1.225 1.231 lm4041d (1.0%) 1.213 1.225 1.237 lm4041e (2.0%) 1.200 1.225 1.250 v r reverse breakdown voltage tolerance lm4041a 1.2 9.2 mv lm4041b 2.4 10.4 lm4041c 6 14 lm4041d 12 24 lm4041e 25 36 i r_min minimum operating current 45 65 a v r / t reverse breakdown voltage temperature coefficient i r = 10 ma 20 ppm/ c i r = 1 ma lm4041a, b, c 15 100 lm4041d, e 15 150 i r = 100 a 15 v r / i r reverse breakdown voltage change with operating current i r_min i r 1 ma lm4041a, b, c 0.7 2.0 mv lm4041d, e 0.7 2.5 1 ma i r 15 ma lm4041a, b, c 2.5 8 lm4041d, e 2.5 10 z r reverse dynamic impedance i r = 1 ma, f = 120 hz, i ac = 0.1 i r lm4041a, b 0.5 1.5 lm4041c 0.5 1.5 lm4041d, e 0.5 2.0 e n wideband noise i r = 100 a, 10 hz f 10 khz 200 v rms v r reverse breakdown voltage long term stability t = 1000 h 120 ppm v hyst thermal hysteresis (note 2) t = ? 40 c to +125 c 0.08 % 2.500 v v r reverse breakdown voltage t a = +25 c lm4040a (0.1%) 2.498 2.500 2.502 v lm4040b (0.2%) 2.496 2.500 2.504 lm4040c (0.5%) 2.490 2.500 2.510 lm4040d (1.0%) 2.475 2.500 2.525 lm4040e (2.0%) 2.450 2.500 2.550 v r reverse breakdown voltage tolerance lm4040a 2 19 mv lm4040b 4 21 lm4040c 10 29 lm4040d 25 49 lm4040e 50 74 1. guaranteed by design. 2. thermal hysteresis is defined as the difference in voltage measured at +25 c after cycling to temperature ? 40 c and the 25 c measure- ment after cycling to temperature +125 c.
lm4040, lm4041 http://onsemi.com 4 table 5. dc electrical characteristics (i r = 100 a, t a = ? 40 c to +85 c, unless otherwise noted. typical values are at t a = +25 c.) symbol units limits test conditions parameter symbol units max typ min test conditions parameter 2.500 v i r_min minimum operating current 45 65 a v r / t reverse breakdown voltage temperature coefficient i r = 10 ma 20 ppm/ c i r = 1 ma lm4040a, b, c 15 100 lm4040d, e 15 150 i r = 100 a 15 v r / i r reverse breakdown voltage change with operating current i r_min i r 1 ma lm4040a, b, c 0.3 1.0 mv lm4040d, e 0.3 1.2 1 ma i r 15 ma lm4040a, b, c 2.5 8 lm4040d, e 2.5 10 z r reverse dynamic impedance i r = 1 ma, f = 120 hz, i ac = 0.1 i r lm4040a, b 0.3 0.8 lm4040c 0.3 0.9 lm4040d, e 0.3 1.1 e n wideband noise i r = 100 a, 10 hz f 10 khz 350 v rms v r reverse breakdown voltage long term stability t = 1000 h 120 ppm v hyst thermal hysteresis (note 2) t = ? 40 c to +125 c 0.08 % 3.000 v v r reverse breakdown voltage t a = +25 c lm4040a (0.1%) 2.997 3.000 3.003 v lm4040b (0.2%) 2.994 3.000 3.006 lm4040c (0.5%) 2.985 3.000 3.015 lm4040d (1.0%) 2.970 3.000 3.030 lm4040e (2.0%) 2.940 3.000 3.060 v r reverse breakdown voltage tolerance lm4040a 3 22 mv lm4040b 6 26 lm4040c 15 34 lm4040d 30 59 lm4040e 60 89 i r_min minimum operating current 45 65 a v r / t reverse breakdown voltage temperature coefficient i r = 10 ma 20 ppm/ c i r = 1 ma lm4040a, b, c 15 100 lm4040d, e 15 150 i r = 100 ua 15 v r / i r reverse breakdown voltage change with operating current i r_min i r 1 ma lm4040a, b, c 0.4 1.1 mv lm4040d, e 0.4 1.3 1ma i r 15 ma lm4040a, b, c 2.7 9 lm4040d, e 2.7 11 1. guaranteed by design. 2. thermal hysteresis is defined as the difference in voltage measured at +25 c after cycling to temperature ? 40 c and the 25 c measure- ment after cycling to temperature +125 c.
lm4040, lm4041 http://onsemi.com 5 table 5. dc electrical characteristics (i r = 100 a, t a = ? 40 c to +85 c, unless otherwise noted. typical values are at t a = +25 c.) symbol units limits test conditions parameter symbol units max typ min test conditions parameter 3.000 v z r reverse dynamic impedance i r = 1 ma, f = 120 hz, i ac = 0.1 i r lm4040a, b 0.4 0.9 lm4040c 0.4 0.9 lm4040d, e 0.4 1.2 e n wideband noise i r = 100 a, 10 hz f 10 khz 350 v rms v r reverse breakdown voltage long term stability t = 1000 h 120 ppm v hyst thermal hysteresis (note 2) t = ? 40 c to +125 c 0.08 % 3.300 v v r reverse breakdown voltage t a = +25 c lm4040a (0.1%) 3.297 3.300 3.303 v lm4040b (0.2%) 3.294 3.300 3.306 v r reverse breakdown voltage t a = +25 c lm4040c (0.5%) 3.285 3.300 3.315 v lm4040d (1.0%) 3.270 3.300 3.330 v r reverse breakdown voltage tolerance lm4040a 3 22 mv lm4040b 6 26 lm4040c 15 34 lm4040d 30 59 i r_min minimum operating current 45 65 a v r / t reverse breakdown voltage temperature coefficient i r = 10 ma 20 ppm/ c i r = 1 ma lm4040a, b, c 15 100 lm4040d 15 150 i r = 100 a 15 v r / i r reverse breakdown voltage change with operating current i r_min i r 1 ma lm4040a, b, c 0.3 1.0 mv lm4040d 0.3 1.2 1 ma i r 15 ma lm4040a, b, c 2.5 8 lm4040d 2.5 10 z r reverse dynamic impedance i r = 1 ma, f = 120 hz, i ac = 0.1 i r lm4040a, b 0.3 0.8 lm4040c 0.3 0.9 lm4040d 0.3 1.1 e n wideband noise i r = 100 a, 10 hz f 10 khz 350 v rms v r reverse breakdown voltage long term stability t = 1000 h 120 ppm v hyst thermal hysteresis (note 2) t = ? 40 c to +125 c 0.08 % 4.096 v v r reverse breakdown voltage t a = +25 c lm4040a (0.1%) 4.092 4.096 4.100 v lm4040b (0.2%) 4.088 4.096 4.104 lm4040c (0.5%) 4.080 4.096 4.120 lm4040d (1.0%) 4.055 4.096 4.137 1. guaranteed by design. 2. thermal hysteresis is defined as the difference in voltage measured at +25 c after cycling to temperature ? 40 c and the 25 c measure- ment after cycling to temperature +125 c.
lm4040, lm4041 http://onsemi.com 6 table 5. dc electrical characteristics (i r = 100 a, t a = ? 40 c to +85 c, unless otherwise noted. typical values are at t a = +25 c.) symbol units limits test conditions parameter symbol units max typ min test conditions parameter 4.096 v v r reverse breakdown voltage tolerance lm4040a 4 31 mv lm4040b 8 35 lm4040c 20 47 lm4040d 41 80 i r_min minimum operating current 45 65 a v r / t reverse breakdown voltage temperature coefficient i r = 10 ma 30 ppm/ c i r = 1 ma lm4040a, b, c 20 100 lm4040d 20 150 i r = 100 a 15 v r / i r reverse breakdown voltage change with operating current i r_min i r 1 ma lm4040a, b, c 0.5 1.2 mv lm4040d 0.5 1.5 1 ma i r 15 ma lm4040a, b, c 3.0 10 lm4040d 3.0 13 z r reverse dynamic impedance i r = 1 ma, f = 120 hz, i ac = 0.1 i r lm4040a, b 0.5 1.0 lm4040c 0.5 1.0 lm4040d 0.5 1.3 e n wideband noise i r = 100 a, 10 hz f 10 khz 800 v rms v r reverse breakdown voltage long term stability t = 1000 h 120 ppm v hyst thermal hysteresis (note 2) t = ? 40 c to +125 c 0.08 % 5.000 v v r reverse breakdown voltage t a = +25 c lm4040a (0.1%) 4.995 5.000 5.005 v lm4040b (0.2%) 4.990 5.000 5.010 lm4040c (0.5%) 4.975 5.000 5.025 lm4040d (1.0%) 4.950 5.000 5.050 v r reverse breakdown voltage tolerance lm4040a 5 38 mv lm4040b 10 43 lm4040c 25 58 lm4040d 50 99 i r_min minimum operating current 45 65 a v r / t reverse breakdown voltage temperature coefficient i r = 10 ma 30 ppm/ c i r = 1 ma lm4040a, b, c 20 100 lm4040d 20 150 i r = 100 a 15 1. guaranteed by design. 2. thermal hysteresis is defined as the difference in voltage measured at +25 c after cycling to temperature ? 40 c and the 25 c measure- ment after cycling to temperature +125 c.
lm4040, lm4041 http://onsemi.com 7 table 5. dc electrical characteristics (i r = 100 a, t a = ? 40 c to +85 c, unless otherwise noted. typical values are at t a = +25 c.) symbol units limits test conditions parameter symbol units max typ min test conditions parameter 5.000 v v r / i r reverse breakdown voltage change with operating current i r_min i r 1 ma lm4040a, b, c 0.5 1.4 mv lm4040d 05 1.8 1 ma i r 15 ma lm4040a, b, c 3.5 12 lm4040d 3.5 15 z r reverse dynamic impedance i r = 1 ma, f = 120 hz, i ac = 0.1 i r lm4040a, b 0.5 1.1 lm4040c 0.5 1.1 lm4040d 0.5 1.5 e n wideband noise i r = 100 a, 10 hz f 10 khz 800 v rms v r reverse breakdown voltage long term stability t = 1000 h 120 ppm v hyst thermal hysteresis (note 2) t = ? 40 c to +125 c 0.08 % 1. guaranteed by design. 2. thermal hysteresis is defined as the difference in voltage measured at +25 c after cycling to temperature ? 40 c and the 25 c measure- ment after cycling to temperature +125 c.
lm4040, lm4041 http://onsemi.com 8 typical performance characteristics figure 2. lm4040 ? 2.5 v (r s = 30 k) figure 3. lm4040 ? 5 v (r s = 30 k) response time ( s) response time ( s) 40 30 20 10 0 0 1 2 3 0 5 80 60 40 20 0 0 2 4 6 0 5 10 figure 4. lm4041 ? 1.225 v (r s = 30 k) response time ( s) 40 30 20 10 0 0 0.5 1.0 1.5 0 5 figure 5. reverse characteristics (lm4040 ? 2.5 v) figure 6. reverse characteristics (lm4040 ? 5 v) reverse voltage (v) reverse voltage (v) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 6 5 4 3 2 1 0 0 20 40 60 80 100 v in (v) v in (v) v in (v) reverse current ( a) reverse current ( a) v r (v) v r (v) v r (v) ? 40 c +25 c +85 c ? 40 c +25 c +85 c
lm4040, lm4041 http://onsemi.com 9 typical performance characteristics figure 7. temperature drift ? lm4040 figure 8. temperature drift ? lm4041 temperature ( c) temperature ( c) 100 80 60 40 20 0 ? 20 ? 40 ? 0.5 ? 0.4 ? 0.3 ? 0.2 ? 0.1 0.1 0.2 0.3 100 80 60 40 20 0 ? 20 ? 40 ? 0.5 ? 0.4 ? 0.3 ? 0.2 0 0.2 0.3 0.4 figure 9. output impedance vs. frequency figure 10. output impedance vs. frequency frequency (hz) frequency (hz) 1.e+04 1.e+03 1.e+02 1.e+03 figure 11. reverse characteristics ? lm4041 reverse voltage (v) 2.0 1.6 1.2 0.8 0.4 0 0 20 40 60 80 100 v r change (%) v r change (%) output impedance ( ) output impedance ( ) reverse current ( a) 0 i r = 150 a ? 20 ppm/ c +35 ppm/ c ? 40 c +25 c +85 c ? 0.1 0.1 i r = 150 a ? 29 ppm/ c +48 ppm/ c 1.e+05 1.e+06 c l = 0 f c l = 1 f i r = 150 a t j = 25 c, i r = 0.1i r 1.e+02 1.e+01 1.e+00 1.e ? 01 lm4041 ? 1.225 v lm4040 ? 2.5 v lm4040 ? 5 v 1.e+03 1.e+02 1.e+01 1.e+00 1.e ? 01 1.e+04 1.e+03 1.e+02 1.e+05 1.e+06 c l = 0 f c l = 1 f i r = 1 ma t j = 25 c, i r = 0.1i r lm4041 ? 1.225 v lm4040 ? 2.5 v lm4040 ? 5 v
lm4040, lm4041 http://onsemi.com 10 device description the lm404x shunt references use on semiconductor?s floating gate (eeprom) technology to produce a capacitor which stores an accurate and stable voltage that is used as the reference voltage for a control amplifier and shunt n ? channel fet. figure 12. functional block diagram v ref ? ? + + + the device operates like a zener diode; maintaining a fixed voltage across its output terminals when biased with 60 a to 15 ma of reverse current. the lm404x will also act like a silicon diode when forward biased with currents up to 10 ma. applications information the lm404x?s internal pass transistor maintains a constant output voltage by sinking the necessary amount of current across a source resistor. the source resistance (rs) is set by the load current range (i load ), supply voltage (vs) variations, lm404x?s terminal voltage (vr), and desired quiescent current. figure 13. typical operating circuit i shunt i load rs vs v r to select a value of rs, set vs at its minimum value and i load at its maximum. be sure to maintain a minimum operating current of 60 a through lm404x at all times, as lm404x uses this current to power its internal circuitry. the rs value should be large enough to keep i shunt less than 15 ma for proper regulation when vs is maximum and i load is at a minimum. therefore, the value of rs is bounded by the following equation: v s(min) v r 60 a i load(max) rs and rs v s(max) v r 15 ma i load(min) choosing a larger resistance minimizes the power dissipated in the circuit by reducing the shunt current. output capacitance the lm404x does not require an external capacitor for frequency stability and is stable for any output capacitance. effect of temperature lm404x has an output voltage temperature coefficient of typically 15 to 30 ppm/ c meaning the lm404x?s output voltage will change by 50 ? 100 v/ c for a 3.300 v regulator. the polarity of this temperature induced voltage shift can vary from device to device, some moving in the positive direction and others in the negative direction.
lm4040, lm4041 http://onsemi.com 11 table 6. ordering information part number specific device marking voltage accuracy max drift temperature range package (note 3) lm4041 a tb ? 122gt3* 4m 1.225 v 0.1% 100 ppm/ c ? 40 c to 85 c sot ? 23 ? 3 lm4041 b tb ? 122gt3 0.2% lm4041 c tb ? 122gt3 0.5% lm4041 d tb ? 122gt3 1.0%, 150 ppm/ c lm4041 e tb ? 122gt3 2.0%, lm4040 a tb ? 250gt3* 4l 2.500 v 0.1% 100 ppm/ c lm4040 b tb ? 250gt3 0.2% lm4040 c tb ? 250gt3 0.5% lm4040 d tb ? 250gt3 1.0%, 150 ppm/ c lm4040 e tb ? 250gt3* 2.0%, lm4040 a tb ? 300gt3* 3.000 v 0.1% 100 ppm/ c lm4040 b tb ? 300gt3 0.2% lm4040 c tb ? 300gt3 0.5% lm4040 d tb ? 300gt3 1.0%, 150 ppm/ c lm4040 e tb ? 300gt3* 2.0%, lm4040 a tb ? 330gt3* 3.300 v 0.1% 100 ppm/ c lm4040 b tb ? 330gt3 0.2% lm4040 c tb ? 330gt3 0.5% lm4040 d tb ? 330gt3 1.0%, 150 ppm/ c lm4040 e tb ? 330gt3* 2.0%, lm4040 a tb ? 409gt3* 4.096 v 0.1% 100 ppm/ c lm4040 b tb ? 409gt3 0.2% lm4040 c tb ? 409gt3 0.5% lm4040 d tb ? 409gt3 1.0%, 150 ppm/ c lm4040 e tb ? 409gt3* 2.0%, lm4040 a tb ? 500gt3 5.000 v 0.1% 100 ppm/ c lm4040 b tb ? 500gt3 0.2% lm4040 c tb ? 500gt3 0.5% lm4040 d tb ? 500gt3 1.0%, 150 ppm/ c lm4040 e tb ? 500gt3* 2.0%, *consult sales. 3. tape & reel, 3,000 units / reel 4. all packages are rohs ? compliant (lead ? free, halogen ? free). 5. the standard lead finish is nipdau. 6. for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. 7. for detailed information and a breakdown of device nomenclature and numbering systems, please see the on semiconductor device nomenclature document, tnd310/d, available at www.onsemi.com
lm4040, lm4041 http://onsemi.com 12 table 6. ordering information part number package (note 3) temperature range max drift accuracy voltage specific device marking lm4041 a sd ? 122gt3* 4m 1.225 v 0.1% 100 ppm/ c ? 40 c to 85 c sc ? 70 ? 5 lm4041 b sd ? 122gt3 0.2% lm4041 c sd ? 122gt3 0.5% lm4041 d sd ? 122gt3 1.0%, 150 ppm/ c lm4041 e sd ? 122gt3* 2.0%, lm4040 a sd ? 250gt3* 4l 2.500 v 0.1% 100 ppm/ c lm4040 b sd ? 250gt3 0.2% lm4040 c sd ? 250gt3 0.5% lm4040 d sd ? 250gt3 1.0%, 150 ppm/ c lm4040 e sd ? 250gt3* 2.0%, lm4040 a sd ? 300gt3* 3.000 v 0.1% 100 ppm/ c lm4040 b sd ? 300gt3 0.2% lm4040 c sd ? 300gt3 0.5% lm4040 d sd ? 300gt3 1.0%, 150 ppm/ c lm4040 e sd ? 300gt3* 2.0%, lm4040 a sd ? 330gt3* 3.300 v 0.1% 100 ppm/ c lm4040 b sd ? 330gt3 0.2% lm4040 c sd ? 330gt3 0.5% lm4040 d sd ? 330gt3 1.0%, 150 ppm/ c lm4040 e sd ? 330gt3* 2.0%, lm4040 a sd ? 409gt3* 4.096 v 0.1% 100 ppm/ c lm4040 b sd ? 409gt3 0.2% lm4040 c sd ? 409gt3 0.5% lm4040 d sd ? 409gt3 1.0%, 150 ppm/ c lm4040 e sd ? 409gt3* 2.0%, lm4040 a sd ? 500gt3* 5.000 v 0.1% 100 ppm/ c lm4040 b sd ? 500gt3 0.2% lm4040 c sd ? 500gt3 0.5% lm4040 d sd ? 500gt3 1.0%, 150 ppm/ c lm4040 e sd ? 500gt3* 2.0%, *consult sales. 3. tape & reel, 3,000 units / reel 4. all packages are rohs ? compliant (lead ? free, halogen ? free). 5. the standard lead finish is nipdau. 6. for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. 7. for detailed information and a breakdown of device nomenclature and numbering systems, please see the on semiconductor device nomenclature document, tnd310/d, available at www.onsemi.com
lm4040, lm4041 http://onsemi.com 13 package dimensions sot ? 23, 3 lead case 527ag issue o e1 e a1 e e1 b d 3 12 c a top view side view end view l1 l notes: (1) all dimensions are in millimeters. angles in degrees. (2) complies with jedec to-236. symbol min nom max a a1 b c d e e1 e e1 l1 0o 8o l 0.013 0.37 0.085 2.80 2.10 1.20 1.90 bsc 0.40 ref 1.12 0.10 0.50 0.18 3.04 2.64 1.40 0.54 ref 0.95 bsc 0.89
lm4040, lm4041 http://onsemi.com 14 package dimensions sc ? 88a (sc ? 70 5 lead), 1.25x2 case 419ac issue a e1 d a l l1 l2 ee b a1 a2 c top view side view end view 1 1 notes: (1) all dimensions are in millimeters. angles in degrees. (2) complies with jedec mo-203. e symbol min nom max a a1 b c d e e1 e l 0o 8o l2 0.00 0.15 0.10 0.26 1.80 1.80 1.15 0.65 bsc 0.15 bsc 1.10 0.10 0.30 0.18 0.46 2.20 2.40 1.35 l1 0.80 1 4o 10o a2 0.80 1.00 0.42 ref 0.36 2.00 2.10 1.25 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 lm4040/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative

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